| PART |
Description |
Maker |
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
| RU2 |
1 A, 600 V, SILICON, SIGNAL DIODE
|
|
| 1N6661 1N6663 JAN1N6663 JANTXV1N6663 JANTX1N6663 1 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation
Microsemi, Corp.
|
| GPP10J-E3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
|
VISHAY SEMICONDUCTORS
|
| ER1J-GT3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
SENSITRON SEMICONDUCTOR
|
| ER1J-LTP |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
MICRO COMMERCIAL COMPONENTS
|
| UF1J-GT3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
SENSITRON SEMICONDUCTOR
|
| SF10JG |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 PLASTIC PACKAGE-2
|
Vishay Beyschlag
|
| MUR140-T MUR160-A |
1.0A SUPER-FAST RECTIFIER 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| BYM10-1000/26 BYM10-600/46 BYM10-100/26 GL41T-HE3 |
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 1300 V, SILICON, SIGNAL DIODE, DO-213AB
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
|
